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| SBM1040CT 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER POWERMITEO3 Features UNDER DEVELOPMENT POWERMITEa3 Dim Min 4.03 6.40 Max 4.09 6.61 NEW PRODUCT * * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability Very Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, OR'ing, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 1 A P 3 E G A B C .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM B 2 J H D E G Mechanical Data * * * * * * Case: POWERMITEa3 Molded Plastic Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See Sheet 2 Weight: 0.072 grams (approx.) M D C PIN 1 PIN 2 H J K C L PIN 3, BOTTOMSIDE HEAT SINK K L M P .178 NOM All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) per element total device Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG Value 40 28 5 10 50 2.5 -55 to +125 -55 to +150 Unit V V A A C/W C C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load Per Package (JEDEC Method), total device TC = 115C Typical Thermal Resistance Junction to Soldering Point Per Element Operating Temperature Range Storage Temperature Range DS30356 Rev. 2 - 1 1 of 3 www.diodes.com SBM1040CT Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)R Per Element VF Min 40 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.45 0.39 0.53 0.50 35 4 10 2 375 Max 3/4 0.48 0.42 0.575 0.55 150 10 80 5 3/4 Unit V V mA mA mA mA pF Test Condition IR = 500mA IF = 5A, Tj = 25C IF = 5A, Tj = 100C IF = 10A, Tj = 25C IF = 10A, Tj = 100C VR = 35V, Tj = 25C VR = 35V, Tj = 100C VR = 17.5V, Tj = 25C VR = 17.5V, Tj = 100C f = 1.0MHz, VR = 4.0V DC NEW PRODUCT Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Peak Reverse Current (Note 1) Total Capacitance Notes: Per Element Per Element IR CT 1. Short duration test pulse used to minimize self-heating effect. Ordering Information (Note 2) Device SBM1040CT-13 Notes: Packaging POWERMITEa3 Shipping 5000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM1040CT YYWW SBM1040CT = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 10 Tj = +125C 10 Tj = +125C 1 Tj = +100C 1 Tj = +100C 0.1 Tj = -25C 0.1 0.01 0.001 Tj = +25C 0.01 Tj = +25C 0.0001 0 100 200 300 400 500 600 0.001 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics, Per Element VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics, Per Element UNDER DEVELOPMENT DS30356 Rev. 2 - 1 2 of 3 www.diodes.com SBM1040CT IFSM, PEAK FORWARD SURGE CURRENT (A) 50 Single Half-Sine-Wave (JEDEC Method) 10,000 f = 1MHz NEW PRODUCT 40 TC = 115C Total Device 30 CT, TOTAL CAPACITANCE (pF) 1000 20 10 0 1 10 100 100 0 5 10 15 20 25 30 35 40 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage, Per Element PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 7.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 8 7 9 10 3 4 6 1 2 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation Note 3 Tj = 125C Note 2 IF, DC FORWARD CURRENT (A) 6.0 Note 1 4.5 Note 2 3.0 dc 1.5 Note 3 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating Notes: 1. TA = TSOLDERING POINT, RqJS = 2.5C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 20-40C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 85-115C/W. UNDER DEVELOPMENT POWERMITE is a registered trademark of Microsemi Corporation. DS30356 Rev. 2 - 1 3 of 3 www.diodes.com SBM1040CT |
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